PA输出匹配的一点总结
时间：10-02
整理：3721RD
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关于PA的书，我觉得Cripps的几本书还是非常值得一读的
1. 《RF Power Amplifiers for Wireless Communications》，1st Edition
2. 《RF Power Amplifiers for Wireless Communications》，2nd Edition，增加不少内容
3. 《Advanced Techniques in RF Power Amplifier Design》
Cripps的书比较艰涩难懂，但开卷之后颇有收获，UCLA的Yuanxun Ethan Wang极力推荐的，大家可以看看。
下面是一位前辈写的关于如何获得最佳阻抗的三种方法，与大家分享：
（找不到作者和出处了，在笔记中翻出来的，回头再找找）
The following methods to determine the optimum load impedance were considered:
(1). The use of the so-called Cripps method.
This method uses a simplified model of the transistor, which can be obtained from small-signal S-parameter measurements at the bias point of interest and knowledge of the DC IV curves. With the help of this information it is possible to construct load-pull contours and the optimum load impedance can be determined.
The Cripps method was not used because of the following limitations:
A. The DC IV curves are not always similar to the AC IV curves;
B. Other essential information for the high-power amplifier design is missing e.g. the input impedance of the transistor under large-signal conditions when it is loaded with the optimum load impedance;
C. Modeling of the external part of a transistor with only the drain to source capacitance is too simplistic. Certainly for large transistors, as it is the case for the discussed high-power amplifiers, the influence of the drain-source resistance and the parasitic inductances on the external optimum impedance can no longer be neglected.
However, if no large-signal transistor model or load-pull measurement set-up is available it can give a reasonable estimation of the optimum load impedance.
(2). The use of load-pull simulations performed with the help of the large-signal transistor model and the contour test bench available in the Agilent Series IV simulation software. Comparison with load-pull measurements shows, that the transistor model will give a good estimation of the location of the optimum load impedance in the case of maximum output power. This becomes more difficult if an optimum load impedance for maximum power added efficiency is searched. This is due to the overestimation of the drain current by the transistor model.
(3). The use of load-pull measurements is still the preferred method to determine the optimum load impedance. When this type of measurements is performed, information becomes available regarding the load impedance of the interstage-matching network.
1. 《RF Power Amplifiers for Wireless Communications》，1st Edition
2. 《RF Power Amplifiers for Wireless Communications》，2nd Edition，增加不少内容
3. 《Advanced Techniques in RF Power Amplifier Design》
Cripps的书比较艰涩难懂，但开卷之后颇有收获，UCLA的Yuanxun Ethan Wang极力推荐的，大家可以看看。
下面是一位前辈写的关于如何获得最佳阻抗的三种方法，与大家分享：
（找不到作者和出处了，在笔记中翻出来的，回头再找找）
The following methods to determine the optimum load impedance were considered:
(1). The use of the so-called Cripps method.
This method uses a simplified model of the transistor, which can be obtained from small-signal S-parameter measurements at the bias point of interest and knowledge of the DC IV curves. With the help of this information it is possible to construct load-pull contours and the optimum load impedance can be determined.
The Cripps method was not used because of the following limitations:
A. The DC IV curves are not always similar to the AC IV curves;
B. Other essential information for the high-power amplifier design is missing e.g. the input impedance of the transistor under large-signal conditions when it is loaded with the optimum load impedance;
C. Modeling of the external part of a transistor with only the drain to source capacitance is too simplistic. Certainly for large transistors, as it is the case for the discussed high-power amplifiers, the influence of the drain-source resistance and the parasitic inductances on the external optimum impedance can no longer be neglected.
However, if no large-signal transistor model or load-pull measurement set-up is available it can give a reasonable estimation of the optimum load impedance.
(2). The use of load-pull simulations performed with the help of the large-signal transistor model and the contour test bench available in the Agilent Series IV simulation software. Comparison with load-pull measurements shows, that the transistor model will give a good estimation of the location of the optimum load impedance in the case of maximum output power. This becomes more difficult if an optimum load impedance for maximum power added efficiency is searched. This is due to the overestimation of the drain current by the transistor model.
(3). The use of load-pull measurements is still the preferred method to determine the optimum load impedance. When this type of measurements is performed, information becomes available regarding the load impedance of the interstage-matching network.
早就看过的,哈哈
拜托，有没有中文版的！